Central-European (Ultra)Wide Bandgap Expertise Cluster – CUBES

Mr Fedor Hrubišák and Dr Filip Gucmann presented results on the improvement of epitaxial growth of gallium oxide on vicinal sapphire and influence of hydrogen incorporation on the electron transport in gallium oxide-based switching transistors at the 2nd Ultra-wide bandgap oxides workshop UWO 2025v (https://iop.eventsair.com/uwo2025/) held at University of Strathclyde, Glasgow, UK on 25th June…

Our colleagues presented their cutting-edge results on the various aspects of gallium oxide technology and devices at the ADEPT conference in Podbanské, Slovakia (https://adept.fyzika.uniza.sk/index.php). Our contribions were met with fruitful discussions and PhD student Hemendra Chouhan of the IEE SAS was awarded in the students’ competition.

Final interinstitutional exchange took place on June 11th – 14th at the IEE SAS. Colleagues from Institute of Microelectronics and Photonics of Łukasiewicz Research Network – Dr. Michał Borysiewicz and Ms Kamila Strycharz attended the extensive laboratory tour and training covering galvanometric measurements and electrical characterization of semiconductor devices which helped in very useful knowledge…

As a result of the newly-established research collaboration,Dr. Dhananjay Kumar Sharma from the Institute of Physics, Czech Academy ofSciences visited the IEE SAS in June 2025. Dr. Sharma gave an informativelecture on the growth and characterization of boron-doped diamond films andtook part in the preparation of Ga2O3 films for theirheterogeneous integration with conductive diamond.

Ms Miriam Krettová, a PhD student at the IEE SAS has presented our latest results achieved in the epitaxial growth of gallium oxide in Brno during the OPERA COST Action event ‘Training School Applications and Characterization of Epitaxial Materials (https://cost-opera.eu/events/opera-cost-action-training-school-hybrid-event/)’. She also took part in training in fabrication and characterization techniques used in the semiconductor technology.

Mr Javad Keshtkar, a PhD student at the IEE SAS, has visited the Institute of Microelectronics and Photonics of Łukasiewicz Research Network in Warsaw to attend the training focused on the sputtering deposition of NiO and fabrication and electrical characterization of NiO-based thin film transistors (TFTs) for evaluation of the conductivity of the deposited NiO…

Our freshmen PhD students Ms Miriam Krettová, Mr Roshan Jeevan Chidambaram, and Mr Sai GuruKrishna Vadlamudi presented their latest results achieved within the CUBES project on growth of monoclinic gallium oxide, structural defects in its rhombohedral phase, and various aspects of homoepitaxial and heteroepitaxial power switching transistors at the 27th Conference of doctoral students ELITECH’25…

Late May an interinstitutional exchange took place at IEE SAS. A delegation from University of Žilina led by Prof. Dušan Pudiš have visited us and presented the newly started collaboration on UV photonics based on Ga2O3. Mr Marek Zdurienčík also took part in the Ga2O3 growth and processing of Ga2O3 based photonic structures. We are…

We organised a successful 2-day workshop on 28th and 29th April dedicated to (U)WBG semiconductor materials and devices in the Centre for Energy Research MFA (Budapest, HU). Delegates from all founding institutions – IEE SAS, Łukasiewicz IMiF, and the Centre for Energy Research, MFA, were attending the workshop. During the workshop, achieved competitive research results…

As a part of the short-term interinstitutional mobilities we have organised the training dedicated to the high-resolution transmission electron microscopy imaging and lamellae preparation by conventional techniques and focused-ion beam method. The training was held in Budapest at the Centre for Energy Research MFA and led by Dr Ildikó Cora and attended by the PhD…